公开(公告)号：US08941136B2

公开(公告)日：2015-01-27

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

摘要翻译： 半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部 光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光 在衍射面衍射并使多模光再次入射到衍射面。 半导体堆叠部分形成在衍射面上。

公开(公告)号：US20120228656A1

公开(公告)日：2012-09-13

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.

摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。 解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面 部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使 在基板的背面侧形成有再次入射到衍射面的光。

公开(公告)号：US20140170799A1

公开(公告)日：2014-06-19

申请号：US14241047

申请日：2012-08-29

申请人： Fumiharu Teramae ,  Koichi Maniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

发明人： Fumiharu Teramae ,  Koichi Maniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

IPC分类号： H01L31/18

CPC分类号： H01L31/1884 ,  C03C15/00 ,  C03C17/36 ,  C03C17/3678 ,  C03C2218/34 ,  H01L31/02366 ,  Y02E10/50

摘要： [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell.[Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

摘要翻译： 问题在于提供一种使用能够通过干蚀刻精确地赋予微细凹凸结构的干法蚀刻的凹凸膜的制造方法，具有凹凸结构的玻璃基板，太阳能 电池，以及太阳能电池的制造方法。 解决问题的手段为了在干法蚀刻期间对由放置在不同蒸气压中的多种氧化物制成的玻璃基板赋予凹凸结构，提供目标成膜步骤和凹凸结构形成步骤 。 本发明的膜形成步骤在玻璃基板的平坦表面上形成由单一材料制成的被膜。 凹凸结构形成工序通过干式蚀刻在本体膜的表面形成周期性凹凸结构。 结果，通过干蚀刻精确地形成精细的凹凸结构。

公开(公告)号：US09117967B2

公开(公告)日：2015-08-25

申请号：US14241047

申请日：2012-08-29

申请人： Fumiharu Teramae ,  Koichi Naniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

发明人： Fumiharu Teramae ,  Koichi Naniwae ,  Tsukasa Kitano ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Midori Mori

IPC分类号： H01L21/00 ,  H01L31/18 ,  C03C15/00 ,  C03C17/36 ,  H01L31/0236

CPC分类号： H01L31/1884 ,  C03C15/00 ,  C03C17/36 ,  C03C17/3678 ,  C03C2218/34 ,  H01L31/02366 ,  Y02E10/50

摘要： [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell.[Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

摘要翻译： 问题在于提供一种使用能够通过干蚀刻精确地赋予微细凹凸结构的干法蚀刻的凹凸膜的制造方法，具有凹凸结构的玻璃基板，太阳能 电池，以及太阳能电池的制造方法。 解决问题的手段为了在干法蚀刻期间对由放置在不同蒸气压中的多种氧化物制成的玻璃基板赋予凹凸结构，提供目标成膜步骤和凹凸结构形成步骤 。 本发明的膜形成步骤在玻璃基板的平坦表面上形成由单一材料制成的被膜。 凹凸结构形成工序通过干式蚀刻在本体膜的表面形成周期性凹凸结构。 结果，通过干蚀刻精确地形成精细的凹凸结构。

公开(公告)号：US20130126907A1

公开(公告)日：2013-05-23

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。

公开(公告)号：US09142619B2

公开(公告)日：2015-09-22

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。