Invention Grant
- Patent Title: Light-emitting device including nitride-based semiconductor omnidirectional reflector
- Patent Title (中): 包括氮化物基半导体全向反射器的发光器件
-
Application No.: US13844632Application Date: 2013-03-15
-
Publication No.: US08941140B2Publication Date: 2015-01-27
- Inventor: Kyung-wook Hwang , Seong-eun Park , Hun-jae Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0029413 20120322
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/00 ; H01L33/10
Abstract:
A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.
Public/Granted literature
- US20130248911A1 LIGHT-EMITTING DEVICE INCLUDING NITRIDE-BASED SEMICONDUCTOR OMNIDIRECTIONAL REFLECTOR Public/Granted day:2013-09-26
Information query
IPC分类:
