发明授权
- 专利标题： Copper interconnect structure and method for forming the same
- 专利标题（中）： 铜互连结构及其形成方法
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申请号： US13586676申请日： 2012-08-15
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公开(公告)号： US08941239B2公开(公告)日： 2015-01-27
- 发明人: Chen-Hua Yu , Shau-Lin Shue , Hsiang-Huan Lee , Ching-Fu Yeh
- 申请人： Chen-Hua Yu , Shau-Lin Shue , Hsiang-Huan Lee , Ching-Fu Yeh
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/14
摘要：
A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier layer is conformally deposited on the sidewalls and the bottom of the opening. A first seed layer is conformally deposited on the first barrier layer. A second barrier layer is conformally deposited on the first seed layer. A second seed layer is conformally deposited on the second barrier layer and a conductive plug is deposited in the opening of the dielectric layer.