Invention Grant
US08941442B2 Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells 有权
制造技术,以提高阳极结合蒸气细胞的压力均匀性

Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
Abstract:
A method of fabricating one or more vapor cells comprises forming one or more vapor cell dies in a first wafer having a first diameter, and anodically bonding a second wafer to a first side of the first wafer over the vapor cell dies, the second wafer having a second diameter. A third wafer is positioned over the vapor cell dies on a second side of the first wafer opposite from the second wafer, with the third wafer having a third diameter. A sacrificial wafer is placed over the third wafer, with the sacrificial wafer having a diameter that is larger than the first, second and third diameters. A metallized bond plate is located over the sacrificial wafer. The third wafer is anodically bonded to the second side of the first wafer when a voltage is applied to the metallized bond plate while the sacrificial wafer is in place.
Information query
Patent Agency Ranking
0/0