Invention Grant
US08941442B2 Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
有权
制造技术,以提高阳极结合蒸气细胞的压力均匀性
- Patent Title: Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
- Patent Title (中): 制造技术,以提高阳极结合蒸气细胞的压力均匀性
-
Application No.: US13662850Application Date: 2012-10-29
-
Publication No.: US08941442B2Publication Date: 2015-01-27
- Inventor: Daniel W. Youngner , Jeff A. Ridley , Son T. Lu
- Applicant: Honeywell International Inc.
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Fogg & Powers LLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01S1/06 ; G04F5/14

Abstract:
A method of fabricating one or more vapor cells comprises forming one or more vapor cell dies in a first wafer having a first diameter, and anodically bonding a second wafer to a first side of the first wafer over the vapor cell dies, the second wafer having a second diameter. A third wafer is positioned over the vapor cell dies on a second side of the first wafer opposite from the second wafer, with the third wafer having a third diameter. A sacrificial wafer is placed over the third wafer, with the sacrificial wafer having a diameter that is larger than the first, second and third diameters. A metallized bond plate is located over the sacrificial wafer. The third wafer is anodically bonded to the second side of the first wafer when a voltage is applied to the metallized bond plate while the sacrificial wafer is in place.
Public/Granted literature
- US20130052405A1 FABRICATION TECHNIQUES TO ENHANCE PRESSURE UNIFORMITY IN ANODICALLY BONDED VAPOR CELLS Public/Granted day:2013-02-28
Information query
IPC分类: