发明授权
- 专利标题: Laser processing method
- 专利标题(中): 激光加工方法
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申请号: US13389048申请日: 2011-07-19
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公开(公告)号: US08945416B2公开(公告)日: 2015-02-03
- 发明人: Hideki Shimoi , Keisuke Araki
- 申请人: Hideki Shimoi , Keisuke Araki
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2010-167410 20100726
- 国际申请: PCT/JP2011/066323 WO 20110719
- 国际公布: WO2012/014712 WO 20120202
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; B23K26/38 ; B23K26/40 ; H01L21/306 ; H01L21/48 ; B23K26/00
摘要:
A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
公开/授权文献
- US20120135606A1 LASER PROCESSING METHOD 公开/授权日:2012-05-31
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