发明授权
US08946061B2 Engineering of porous coatings formed by ion-assisted direct deposition 有权
通过离子辅助直接沉积形成的多孔涂层工程

Engineering of porous coatings formed by ion-assisted direct deposition
摘要:
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
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