发明授权
US08946061B2 Engineering of porous coatings formed by ion-assisted direct deposition
有权
通过离子辅助直接沉积形成的多孔涂层工程
- 专利标题: Engineering of porous coatings formed by ion-assisted direct deposition
- 专利标题(中): 通过离子辅助直接沉积形成的多孔涂层工程
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申请号: US13597146申请日: 2012-08-28
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公开(公告)号: US08946061B2公开(公告)日: 2015-02-03
- 发明人: Blake Darby , Ludovic Godet , Xianfeng Lu
- 申请人: Blake Darby , Ludovic Godet , Xianfeng Lu
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equiptment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equiptment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; C23C16/24 ; C23C16/28 ; C23C16/452 ; H01M4/04 ; H01M4/1395
摘要:
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
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