公开(公告)号：US08946061B2

公开(公告)日：2015-02-03

申请号：US13597146

申请日：2012-08-28

申请人： Blake Darby ,  Ludovic Godet ,  Xianfeng Lu

发明人： Blake Darby ,  Ludovic Godet ,  Xianfeng Lu

IPC分类号： H01L21/00 ,  C23C16/24 ,  C23C16/28 ,  C23C16/452 ,  H01M4/04 ,  H01M4/1395

CPC分类号： C23C16/24 ,  C23C16/28 ,  C23C16/452 ,  H01M4/0421 ,  H01M4/1395 ,  Y02E60/122

摘要： In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.

摘要翻译： 在一个实施例中，在工件上制造多孔半导体膜的方法包括在等离子体室的等离子体中产生包括锗前驱体离子和硅前体离子中的一种或多种的半导体前体离子，其中半导体前体离子可操作 以在工件上形成多孔膜。 该方法还包括在半角度范围内将半导体前体离子引导到工件。

公开(公告)号：US20120289030A1

公开(公告)日：2012-11-15

申请号：US13469750

申请日：2012-05-11

申请人： Ludovic Godet ,  Xianfeng Lu ,  Deepak Ramappa

发明人： Ludovic Godet ,  Xianfeng Lu ,  Deepak Ramappa

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： C23C16/24 ,  C23C16/045 ,  C23C16/505 ,  H01J37/32082 ,  H01L31/02168 ,  H01L31/0284 ,  Y02E10/50

摘要： Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to create ion beams of various incidence angles. These ion beams may, in some cases, form a focused ion beam. The wide range of incidence angles allows the material to be deposited amorphously. The porosity and pore size can be varied by changing various process parameters. In other embodiments, porous oxides can be created by adding oxygen to previously created layers of porous material.

摘要翻译： 描述了产生多孔材料如硅的方法。 在一些实施例中，使用等离子体护套修改来产生各种入射角的离子束。 在某些情况下，这些离子束可形成聚焦离子束。 大范围的入射角允许材料无定形地沉积。 通过改变各种工艺参数可以改变孔隙度和孔径。 在其它实施方案中，多孔氧化物可以通过向先前产生的多孔材料层加入氧来产生。

公开(公告)号：US08906576B2

公开(公告)日：2014-12-09

申请号：US13357647

申请日：2012-01-25

申请人： Blake L. Darby ,  Ludovic Godet ,  Xianfeng Lu ,  Tristan Yonghui Ma

发明人： Blake L. Darby ,  Ludovic Godet ,  Xianfeng Lu ,  Tristan Yonghui Ma

IPC分类号： H01M8/22 ,  H01M4/04

CPC分类号： H01M4/04 ,  H01M4/0428 ,  Y02E60/12

摘要： A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed.

摘要翻译： 公开了一种处理电池用电极以提高其性能的方法。 通过在电极上沉积多孔碳层，可以提高其充电和放电特性以及化学稳定性。 该方法包括产生包括碳并且等离子体朝向电极吸引的等离子体，例如通过偏置设置有电极的压板。 在一些实施例中，也对沉积的多孔碳进行蚀刻工艺以增加其表面积。 电极也可以暴露于亲水处理以改善其与电解质的相互作用。 此外，公开了包括根据该方法处理的至少一个电极的电池。

公开(公告)号：US20130189579A1

公开(公告)日：2013-07-25

申请号：US13357647

申请日：2012-01-25

申请人： Blake L. Darby ,  Ludovic Godet ,  Xianfeng Lu ,  Tristan Yonghui Ma

发明人： Blake L. Darby ,  Ludovic Godet ,  Xianfeng Lu ,  Tristan Yonghui Ma

IPC分类号： H01M4/131 ,  C23C16/26 ,  C23C16/56 ,  H01M2/16 ,  C23C16/50

CPC分类号： H01M4/04 ,  H01M4/0428 ,  Y02E60/12

摘要： A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed.

摘要翻译： 公开了一种处理电池用电极以提高其性能的方法。 通过在电极上沉积多孔碳层，可以提高其充电和放电特性以及化学稳定性。 该方法包括产生包括碳并且等离子体朝向电极吸引的等离子体，例如通过偏置设置有电极的压板。 在一些实施例中，也对沉积的多孔碳进行蚀刻工艺以增加其表面积。 电极也可以暴露于亲水处理以改善其与电解质的相互作用。 此外，公开了包括根据该方法处理的至少一个电极的电池。

公开(公告)号：US20130045557A1

公开(公告)日：2013-02-21

申请号：US13587325

申请日：2012-08-16

申请人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

发明人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

IPC分类号： H01L21/22

CPC分类号： H01L35/34 ,  H01L35/22

摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.

摘要翻译： 公开了一种制造具有高导电性和低热导率的热电材料的改进方法。 在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。 在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。

公开(公告)号：US20130045339A1

公开(公告)日：2013-02-21

申请号：US13210122

申请日：2011-08-15

申请人： Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

发明人： Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

IPC分类号： H05H1/24 ,  C23C16/50 ,  B05C11/00

CPC分类号： C23C14/0611 ,  C23C14/042 ,  C23C14/221 ,  C23C14/54

摘要： Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma.

公开(公告)号：US08697549B2

公开(公告)日：2014-04-15

申请号：US13587325

申请日：2012-08-16

申请人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

发明人： Xianfeng Lu ,  Ludovic Godet ,  Christopher Hatem ,  John Hautala

IPC分类号： H01L21/20

CPC分类号： H01L35/34 ,  H01L35/22

摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.

摘要翻译： 公开了一种制造具有高导电性和低热导率的热电材料的改进方法。 在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。 在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。

公开(公告)号：US20120288637A1

公开(公告)日：2012-11-15

申请号：US13470731

申请日：2012-05-14

申请人： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

发明人： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

IPC分类号： C23C14/48

CPC分类号： C23C14/48 ,  B41J2/1606 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32623

摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

摘要翻译： 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

公开(公告)号：US09425027B2

公开(公告)日：2016-08-23

申请号：US13470731

申请日：2012-05-14

申请人： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

发明人： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

IPC分类号： C23C14/48 ,  C23C14/34 ,  H01J37/32 ,  B41J2/16

CPC分类号： C23C14/48 ,  B41J2/1606 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32623

摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

摘要翻译： 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

公开(公告)号：US08728951B2

公开(公告)日：2014-05-20

申请号：US13563056

申请日：2012-07-31

申请人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

发明人： Ludovic Godet ,  Xianfeng Lu ,  Deepak A. Ramappa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32366 ,  C23C16/04 ,  C23C16/50 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/08 ,  H01J2237/31732

摘要： A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.

摘要翻译： 一种处理衬底的方法包括执行第一曝光，其包括在等离子体室中产生含有反应气体离子的等离子体，并在衬底和等离子体室之间产生偏置电压。 该方法还包括提供等离子体护套改性剂，其具有设置在等离子体和衬底之间的孔，并可操作以将反应性气体离子引向衬底，并且在反应性气体离子被引导到等离子体室和衬底区域之间建立压力差 底物。