Invention Grant
- Patent Title: Phase change memory cell with large electrode contact area
- Patent Title (中): 具有大电极接触面积的相变存储单元
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Application No.: US13958656Application Date: 2013-08-05
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Publication No.: US08946073B2Publication Date: 2015-02-03
- Inventor: Matthew J. BrightSky , Chung H. Lam , Jing Li , Alejandro G. Schrott , Norma E. Sosa Cortes
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Louis J. Percello
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/76 ; H01L21/06 ; H01L21/00 ; H01L45/00
Abstract:
A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.
Public/Granted literature
- US20140170831A1 PHASE CHANGE MEMORY CELL WITH LARGE ELECTRODE CONTACT AREA Public/Granted day:2014-06-19
Information query
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