发明授权
- 专利标题： In-situ formation of silicon and tantalum containing barrier
- 专利标题（中）： 硅和钽的屏障原位形成
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申请号： US13167857申请日： 2011-06-24
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公开(公告)号： US08946083B2公开(公告)日： 2015-02-03
- 发明人: Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
- 申请人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/3105 ; H01L21/768 ; H01L23/48
摘要：
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
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