发明授权
- 专利标题： Mask read only memory containing diodes and method of manufacturing the same
- 专利标题（中）： 掩模只读存储器二极管及其制造方法
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申请号： US10642244申请日： 2003-08-18
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公开(公告)号： US08946671B2公开(公告)日： 2015-02-03
- 发明人: Sheng-Chih Lai , Hsiang-Lan Lung , Yi-Chou Chen
- 申请人： Sheng-Chih Lai , Hsiang-Lan Lung , Yi-Chou Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： TW91133003A 20021111
- 主分类号： H01L47/00
- IPC分类号： H01L47/00 ; H01L27/102 ; H01L21/822 ; H01L27/06
摘要：
A mask read only memory containing diodes and method of manufacturing the same. The mask read only memory is a high-density three dimensional array formed by stacking a plurality of diode layers and the logic “0” or “1” is defined by whether there is a dielectric layer on the diode.
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