发明授权
- 专利标题： Semiconductor device with selectively etched surface passivation
- 专利标题（中）： 具有选择性蚀刻表面钝化的半导体器件
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申请号： US13533610申请日： 2012-06-26
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公开(公告)号： US08946776B2公开(公告)日： 2015-02-03
- 发明人: Bruce M. Green , Darrell G. Hill , Jenn Hwa Huang , Karen E. Moore
- 申请人： Bruce M. Green , Darrell G. Hill , Jenn Hwa Huang , Karen E. Moore
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Lempia Summerfield Katz LLC
- 主分类号： H01L29/812
- IPC分类号： H01L29/812
摘要：
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.
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