Invention Grant
- Patent Title: Film forming method
- Patent Title (中): 成膜方法
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Application No.: US13635201Application Date: 2011-02-28
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Publication No.: US08951816B2Publication Date: 2015-02-10
- Inventor: Rena Tsuruoka , Hisao Ikeda , Takuya Tsurume , Tohru Sonoda , Satoshi Inoue
- Applicant: Rena Tsuruoka , Hisao Ikeda , Takuya Tsurume , Tohru Sonoda , Satoshi Inoue
- Applicant Address: JP JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee Address: JP JP
- Agency: Husch Blackwell LLP
- Priority: JP2010-062711 20100318
- International Application: PCT/JP2011/054532 WO 20110228
- International Announcement: WO2011/114874 WO 20110922
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/00 ; C23C14/04 ; H01L51/56

Abstract:
One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.
Public/Granted literature
- US20130011943A1 Film Forming Method Public/Granted day:2013-01-10
Information query
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