发明授权
- 专利标题: Method for increasing photodiode full well capacity
- 专利标题(中): 提高光电二极管全井容量的方法
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申请号: US13429002申请日: 2012-03-23
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公开(公告)号: US08951826B2公开(公告)日: 2015-02-10
- 发明人: Jung-Chi Jeng , Chih-Cherng Jeng , Chih-Kang Chao , Ching-Hwanq Su , Yan-Hua Lin , Yu-Shen Shih
- 申请人: Jung-Chi Jeng , Chih-Cherng Jeng , Chih-Kang Chao , Ching-Hwanq Su , Yan-Hua Lin , Yu-Shen Shih
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/265
- IPC分类号: H01L21/265
摘要:
A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
公开/授权文献
- US20130193539A1 Method for Increasing Photodiode Full Well Capacity 公开/授权日:2013-08-01