公开(公告)号：US20130193539A1

公开(公告)日：2013-08-01

申请号：US13429002

申请日：2012-03-23

Applicant: Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

Inventor： Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/103 ,  Y02E10/547

Abstract: A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Abstract translation: 背面照明CMOS图像传感器包括使用第一高能离子注入工艺在衬底上形成的延伸的光有源区，以及使用第二高能离子注入工艺在衬底上形成的隔离区。 扩展的光有源区被隔离区包围，该隔离区具有与扩展的光活性区相同的深度。 扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

公开(公告)号：US08951826B2

公开(公告)日：2015-02-10

申请号：US13429002

申请日：2012-03-23

Applicant: Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

Inventor： Jung-Chi Jeng ,  Chih-Cherng Jeng ,  Chih-Kang Chao ,  Ching-Hwanq Su ,  Yan-Hua Lin ,  Yu-Shen Shih

IPC: H01L21/265

CPC classification number: H01L31/1804 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/103 ,  Y02E10/547

Abstract: A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Abstract translation: 背面照明CMOS图像传感器包括使用第一高能离子注入工艺在衬底上形成的延伸的光有源区，以及使用第二高能离子注入工艺在衬底上形成的隔离区。 扩展的光有源区被隔离区包围，该隔离区具有与扩展的光活性区相同的深度。 扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。