A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region.