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    RF switch
    1.
    发明授权
    RF switch 有权

    公开(公告)号：US10734987B2

    公开(公告)日：2020-08-04

    申请号：US16506343

    申请日：2019-07-09

    申请人： Infineon Technologies AG

    发明人： Valentyn Solomko ,  Carsten Ahrens ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher

    IPC分类号： H03K17/687 ,  H03K17/06

    摘要： A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

    Method for producing a protective structure
    6.
    发明授权
    Method for producing a protective structure 有权
    保护结构的制造方法

    公开(公告)号：US08951879B2

    公开(公告)日：2015-02-10

    申请号：US14260301

    申请日：2014-04-24

    申请人： Infineon Technologies AG

    发明人： Andre Schmenn ,  Damian Sojka ,  Carsten Ahrens

    IPC分类号： H01L21/331 ,  H01L29/66 ,  H01L21/265 ,  H01L21/22

    CPC分类号： H01L27/0255 ,  H01L21/22 ,  H01L21/265 ,  H01L29/66121 ,  H01L29/868

    摘要： A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region.

    摘要翻译： 制造保护结构的方法可以包括：提供具有第一导电类型的掺杂的半导体基底衬底; 在衬底上产生第一外延层; 在所述第一外延层的界定的注入区域中注入第二导电类型的掺杂剂; 在所述第一外延层上施加掺杂所述第二导电类型的第二外延层; 在所述第二外延层中形成绝缘区，使得所述第二外延层被细分成第一和第二区域; 在注入区域上方的第一区域中产生掺杂第一导电类型的第一掺杂区; 在所述第二区域中产生掺杂所述第二导电类型的第二掺杂区; 从注入区域向外扩散掺杂剂以在第一外延层和第一区域之间的结处形成掩埋层。

    Semiconductor device and method
    9.
    发明授权
    Semiconductor device and method 有权

    公开(公告)号：US11817482B2

    公开(公告)日：2023-11-14

    申请号：US16997980

    申请日：2020-08-20

    申请人： Infineon Technologies AG

    发明人： Helmut Brech ,  Carsten Ahrens ,  Matthias Zigldrum

    IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778

    CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/78 ,  H01L29/7786

    摘要： A semiconductor device includes a composite layer having a first and second opposing surfaces. The composite layer includes a mesa and a first insulating layer. The mesa has top and bottom surfaces and side faces. The side faces are embedded in the first insulating layer. The mesa includes a Group III nitride-based multilayer structure providing a Group III nitride based device having first and second electrodes arranged on the mesa top surface. First and second outer contacts are positioned on the second surface of the composite layer. A first conductive via extends through the first insulating layer and is electrically coupled to the first electrode on the mesa top surface and to the first outer contact. A second conductive via extends through the first insulating layer and is electrically coupled to the second electrode on the mesa top surface and to the second outer contact.

    Method and Structure for Sensors on Glass
    10.
    发明申请
    Method and Structure for Sensors on Glass 有权

    公开(公告)号：US20220009771A1

    公开(公告)日：2022-01-13

    申请号：US17357234

    申请日：2021-06-24

    申请人： Infineon Technologies AG

    发明人： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein

    IPC分类号： B81C1/00 ,  B81B3/00

    摘要： A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.