Invention Grant
- Patent Title: Method of fabricating optoelectronic integrated circuit substrate
- Patent Title (中): 制造光电集成电路基板的方法
-
Application No.: US13868497Application Date: 2013-04-23
-
Publication No.: US08951882B2Publication Date: 2015-02-10
- Inventor: Seong-ho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0132607 20121121
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762
Abstract:
A method of fabricating an optoelectronic integrated circuit substrate includes defining a photonic device region on a first substrate, the photonic device region having a photonic device formed thereon, forming a trench in the photonic device region on a top surface of the first substrate, the trench having a first depth, filling the trench with a dielectric, bonding a second substrate on the first substrate to cover the trench, and thinning the second substrate to a first thickness.
Public/Granted literature
- US20140141546A1 METHOD OF FABRICATING OPTOELECTRONIC INTEGRATED CIRCUIT SUBSTRATE Public/Granted day:2014-05-22
Information query
IPC分类:
