Invention Grant
- Patent Title: Method for forming a FinFET structure
- Patent Title (中): FinFET结构的形成方法
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Application No.: US14079648Application Date: 2013-11-14
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Publication No.: US08951884B1Publication Date: 2015-02-10
- Inventor: Hung-Lin Shih , Jei-Ming Chen , Chih-Chien Liu , Chin-Fu Lin , Kuan-Hsien Li
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/423 ; H01L21/8234 ; H01L21/02 ; H01L21/306
Abstract:
A method for forming a FinFET structure includes providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively. A first oxide layer cover the first fin structure and the second fin structure. Next a first protective layer and a second protective layer are entirely formed on the substrate and the first oxide layer in sequence, the second protective layer within the first region is removed, and the first protective layer within the first region is then removed. Afterwards, the first oxide layer covering the first fin structure and the second protective layer within the second region are removed simultaneously, and a second oxide layer is formed to cover the first fin structure.
Information query
IPC分类:
