Method for fabricating an interlayer

Invention Grant

US08951922B2 Method for fabricating an interlayer 有权

Title translation: 中间层的制造方法

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Patent Title: Method for fabricating an interlayer
Patent Title (中): 中间层的制造方法
Application No.: US13801517

Application Date: 2013-03-13
Publication No.: US08951922B2

Publication Date: 2015-02-10
Inventor: Ching-Fuh Lin , Kuei-Yu Cian , Shao-Hsuan Kao
Applicant: National Taiwan University
Applicant Address: TW Taipei
Assignee: National Taiwan University
Current Assignee: National Taiwan University
Current Assignee Address: TW Taipei
Agency: Stout, Uxa & Buyan, LLP
Agent Donald E. Stout
Priority: TW102102293A 20130122
Main IPC: H01L21/312
IPC: H01L21/312 ; C08F2/48 ; H01L51/00 ; H01L51/42

Abstract:

The present invention relates to a method for fabricating an interlayer, and particularly relates to a method for fabricating an interlayer PCBM which is difficult to be dissolved in organic solvents. The solubility of the interlayer (PCBM) in organic solvents is decreased by polymerization of the interlayer (PCBM). Therefore, the thickness of the interlayer (PCBM) can be efficiently controlled, and the yield rate and efficiency of photoelectric devices can be improved.

Abstract(Chinese):

本发明涉及一种中间层的制造方法，特别涉及难以溶解在有机溶剂中的中间层PCBM的制造方法。通过中间层（PCBM）的聚合，中间层（PCBM）在有机溶剂中的溶解度降低。因此，能够有效地控制中间层（PCBM）的厚度，能够提高光电器件的成品率和效率。

Public/Granted literature

US20140206131A1 METHOD FOR FABRICATING AN INTERLAYER Public/Granted day:2014-07-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/312	......有机层，例如光刻胶（H01L21/3105、H01L21/32优先）