发明授权
- 专利标题： Semiconductor structure and process thereof
- 专利标题（中）： 半导体结构及其工艺
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申请号： US13369260申请日： 2012-02-08
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公开(公告)号： US08952392B2公开(公告)日： 2015-02-10
- 发明人: Chieh-Te Chen , Yi-Po Lin , Jiunn-Hsiung Liao , Shui-Yen Lu , Li-Chiang Chen
- 申请人： Chieh-Te Chen , Yi-Po Lin , Jiunn-Hsiung Liao , Shui-Yen Lu , Li-Chiang Chen
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/336
摘要：
A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided.
公开/授权文献
- US20130200393A1 SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF 公开/授权日：2013-08-08
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