公开(公告)号：US08952392B2

公开(公告)日：2015-02-10

申请号：US13369260

申请日：2012-02-08

申请人： Chieh-Te Chen ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shui-Yen Lu ,  Li-Chiang Chen

发明人： Chieh-Te Chen ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shui-Yen Lu ,  Li-Chiang Chen

IPC分类号： H01L29/15 ,  H01L21/336

CPC分类号： H01L28/20 ,  H01L21/76897 ,  H01L27/0629 ,  H01L28/24 ,  H01L29/66545

摘要： A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided.

摘要翻译： 半导体结构包括基板，抗蚀剂层，电介质材料，两个U形金属层和两种金属。 衬底具有隔离结构。 抗蚀剂层位于隔离结构上。 介电材料位于抗蚀剂层上。 两个U形金属层位于电介质材料的两侧和抗蚀剂层上。 两个金属分别位于两个U形金属层上。 以这种方式提供了用于形成所述半导体结构的半导体工艺。

公开(公告)号：US20130200393A1

公开(公告)日：2013-08-08

申请号：US13369260

申请日：2012-02-08

申请人： Chieh-Te Chen ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shui-Yen Lu ,  Li-Chiang Chen

发明人： Chieh-Te Chen ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Shui-Yen Lu ,  Li-Chiang Chen

IPC分类号： H01L29/16 ,  H01L21/28

CPC分类号： H01L28/20 ,  H01L21/76897 ,  H01L27/0629 ,  H01L28/24 ,  H01L29/66545

摘要： A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided.

摘要翻译： 半导体结构包括基板，抗蚀剂层，电介质材料，两个U形金属层和两种金属。 衬底具有隔离结构。 抗蚀剂层位于隔离结构上。 介电材料位于抗蚀剂层上。 两个U形金属层位于电介质材料的两侧和抗蚀剂层上。 两个金属分别位于两个U形金属层上。 以这种方式提供了用于形成所述半导体结构的半导体工艺。

公开(公告)号：US20130109151A1

公开(公告)日：2013-05-02

申请号：US13281459

申请日：2011-10-26

申请人： Ching-Pin Hsu ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Chieh-Te Chen ,  Feng-Yi Chang ,  Shang-Yuan Tsai ,  Li-Chiang Chen

发明人： Ching-Pin Hsu ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Chieh-Te Chen ,  Feng-Yi Chang ,  Shang-Yuan Tsai ,  Li-Chiang Chen

IPC分类号： H01L21/762

CPC分类号： H01L21/76232

摘要： A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching step is performed to totally remove the photoresist so that the remaining second stressed layer forms at least one protrusion adjacent to the recess. Then, a trimming photoresist is formed without exposure to fill the recess and to cover the protrusion. Later, a trimming etching step is performed to eliminate the protrusion and to collaterally remove the trimming photoresist.

摘要翻译： 公开了一种形成没有空隙的电介质层的方法。 首先，提供基板，包括凹部的第一应力层，设置在第一应力层上并覆盖凹部的第二应力层和嵌入凹部中的图案化光致抗蚀剂。 第二，执行第一蚀刻步骤以完全去除光致抗蚀剂，使得剩余的第二应力层形成邻近凹部的至少一个突起。 然后，在不暴露的情况下形成修整光致抗蚀剂以填充凹部并覆盖突起。 然后，进行修整蚀刻步骤以消除突起并且顺利地移除修整光致抗蚀剂。

公开(公告)号：US08691659B2

公开(公告)日：2014-04-08

申请号：US13281459

申请日：2011-10-26

申请人： Ching-Pin Hsu ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Chieh-Te Chen ,  Feng-Yi Chang ,  Shang-Yuan Tsai ,  Li-Chiang Chen

发明人： Ching-Pin Hsu ,  Yi-Po Lin ,  Jiunn-Hsiung Liao ,  Chieh-Te Chen ,  Feng-Yi Chang ,  Shang-Yuan Tsai ,  Li-Chiang Chen

IPC分类号： H01L21/762

CPC分类号： H01L21/76232

摘要： A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching step is performed to totally remove the photoresist so that the remaining second stressed layer forms at least one protrusion adjacent to the recess. Then, a trimming photoresist is formed without exposure to fill the recess and to cover the protrusion. Later, a trimming etching step is performed to eliminate the protrusion and to collaterally remove the trimming photoresist.

摘要翻译： 公开了一种形成没有空隙的电介质层的方法。 首先，提供基板，包括凹部的第一应力层，设置在第一应力层上并覆盖凹部的第二应力层和嵌入凹部中的图案化光致抗蚀剂。 第二，执行第一蚀刻步骤以完全去除光致抗蚀剂，使得剩余的第二应力层形成邻近凹部的至少一个突起。 然后，在不暴露的情况下形成修整光致抗蚀剂以填充凹部并覆盖突起。 然后，进行修整蚀刻步骤以消除突起并且顺利地移除修整光致抗蚀剂。

公开(公告)号：US5186607A

公开(公告)日：1993-02-16

申请号：US831447

申请日：1992-02-05

申请人： Shyh-Ching Yang ,  Li-Chiang Chen

发明人： Shyh-Ching Yang ,  Li-Chiang Chen

IPC分类号： F01D9/02 ,  F02B1/04 ,  F23C7/00 ,  F23R3/14

CPC分类号： F01D9/02 ,  F23C7/004 ,  F23R3/14 ,  F02B1/04 ,  F05D2250/00

摘要： Disclosed is an axial vane for a swirl generator according to mathematical equation so that the air flow is gradually deviated with minimized pressure drop and turbulence intensity.

摘要翻译： 公开了根据数学方程式的涡流发生器的轴向叶片，使得空气流以最小的压降和湍流强度逐渐偏离。

公开(公告)号：US5433600A

公开(公告)日：1995-07-18

申请号：US226822

申请日：1994-04-13

申请人： Jing-Lyang Jeng ,  Jar-Lu Huang ,  Li-Chiang Chen ,  Steven J. Bortz

发明人： Jing-Lyang Jeng ,  Jar-Lu Huang ,  Li-Chiang Chen ,  Steven J. Bortz

IPC分类号： F23C7/02 ,  F23D14/24 ,  F23M9/00

CPC分类号： F23D14/24 ,  F23C7/02

摘要： A burner having a primary flame zone and a secondary flame zone. The throat of the quarl in the center of the primary flame zone is provided with a gas nozzle supported by a swirl element. The orifices of the nozzle are radially and obliquely distributed so that the gas introduced via the frustoconical chamber mixed with the primary air to form a swirl current. The frustoconical chamber extends to the inner surface of the burner to form a circular extended section to restrain the width of the flame; the extended section is parallel to the secondary air inlets distributed on the burner body around the periphery of the frustoconical chamber to effectively control the formation of NOx during combustion.

摘要翻译： 具有主要火焰区域和次要火焰区域的燃烧器。 在主火焰区域的中心处的口腔的喉部设置有由旋流元件支撑的气体喷嘴。 喷嘴的孔径向和倾斜地分布，使得通过截头圆锥室引入的气体与一次空气混合以形成旋流流。 截头圆锥形腔室延伸到燃烧器的内表面以形成圆形延伸部分以限制火焰的宽度; 延伸部分平行于分布在燃烧器本体周围的截头圆锥室的二次空气入口，以有效地控制燃烧期间NOx的形成。

公开(公告)号：US5286458A

公开(公告)日：1994-02-15

申请号：US995058

申请日：1992-12-22

申请人： Shyh-Ching Yang ,  Jar-Ru Huang ,  Li-Chiang Chen

发明人： Shyh-Ching Yang ,  Jar-Ru Huang ,  Li-Chiang Chen

IPC分类号： B01D53/34 ,  B01D53/56 ,  B01D53/74 ,  F23C99/00

CPC分类号： B01D53/56

摘要： The present invention relates to an injection noncatalyst denitrogen oxide process control system, in which a reducing agent (such as ammonia), carriers and additional gases are injected into the flue gas of a combustion device. The NO.sub.x in the flue gas will be reduced into nitrogen (N.sub.2) and water (H.sub.2 O). A pressure measurement device and a thermocouple device are installed in an injector for measuring the pressure difference and the temperature of the flue gas respectively, and then be converted into a voltage signal and a thermocouple signal respectively. Both of the signals will be transferred into a controller that is controlled by a computer. The controller can control the flow mass of the reducing agent, carriers and additional gases to the flue gas. Therefore, the reduction reaction of the NO.sub.x can be controlled, thereby maximizing the rate of denitrogen oxide (deNOx) and minimizing the discharge amount of the reducing agent.

摘要翻译： 本发明涉及一种注射非催化剂氮氧化物过程控制系统，其中将还原剂（例如氨），载体和附加气体注入燃烧装置的烟道气中。 废气中的NOx将被还原成氮（N 2）和水（H 2 O）。 在喷射器中安装有压力测量装置和热电偶装置，用于分别测量烟气的压力差和温度，然后分别转换成电压信号和热电偶信号。 这两个信号将被传送到由计算机控制的控制器中。 控制器可以控制还原剂，载体和附加气体到烟气的流量。 因此，可以控制NOx的还原反应，从而最大限度地提高氮氧化物的脱氮率（deNOx）并使还原剂的排出量最小化。