发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US13601372申请日： 2012-08-31
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公开(公告)号： US08952445B2公开(公告)日： 2015-02-10
- 发明人: Masayuki Tanaka , Kazuhiro Matsuo
- 申请人： Masayuki Tanaka , Kazuhiro Matsuo
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-060905 20120316
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28 ; H01L27/115
摘要：
According to one embodiment, a nonvolatile semiconductor memory device has a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control electrode formed on the second insulating film. In the nonvolatile semiconductor memory device, the second insulating film has a laminated structure that has a first silicon oxide film, a first silicon nitride film, and a second silicon oxide film, a first atom is provided at an interface between the first silicon oxide film and the first silicon nitride film, and/or at an interface between the second silicon oxide film and the first silicon nitride film, and the first atom is selected from the group consisting of aluminum, boron, and alkaline earth metals.
公开/授权文献
- US20130240978A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2013-09-19
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