Invention Grant
- Patent Title: Conductive bump structure with a plurality of metal layers
- Patent Title (中): 具有多个金属层的导电凸块结构
-
Application No.: US13677904Application Date: 2012-11-15
-
Publication No.: US08952537B2Publication Date: 2015-02-10
- Inventor: Chien-Feng Chan , Mu-Hsuan Chan , Chun-Tang Lin , Yi-Che Lai
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101124582A 20120709
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/441 ; H01L23/48

Abstract:
A conductive bump structure used to be formed on a substrate having a plurality of bonding pads. The conductive bump structure includes a first metal layer formed on the bonding pads, a second metal layer formed on the first metal layer, and a third metal layer formed on the second metal layer. The second metal layer has a second melting point higher than a third melting point of the third metal layer. Therefore, a thermal compression bonding process is allowed to be performed to the third metal layer first so as to bond the substrate to another substrate, and then a reflow process can be performed to melt the second metal layer and the third metal layer into each other so as to form an alloy portion, thus avoiding cracking of the substrate.
Public/Granted literature
- US20140008787A1 CONDUCTIVE BUMP STRUCTURE AND METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE Public/Granted day:2014-01-09
Information query
IPC分类: