Invention Grant
- Patent Title: Device for protecting an integrated circuit against overvoltages
- Patent Title (中): 用于保护集成电路免受过电压的装置
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Application No.: US13955112Application Date: 2013-07-31
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Publication No.: US08953290B2Publication Date: 2015-02-10
- Inventor: Olivier Ory , Eric Laconde
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1257470 20120801
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L23/62 ; H01L27/02
Abstract:
A device for protecting an integrated circuit against overvoltages, the device being formed inside and on top of a semiconductor substrate of a first conductivity type and including: a capacitor including a well of the second conductivity type penetrating into the substrate and trenches with insulated walls formed in the well and filled with a conductive material; and a zener diode formed by the junction between the substrate and the well.
Public/Granted literature
- US20140036399A1 DEVICE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST OVERVOLTAGES Public/Granted day:2014-02-06
Information query
