Invention Grant
- Patent Title: Surface metal wiring structure for an IC substrate
- Patent Title (中): 用于IC基片的表面金属布线结构
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Application No.: US13412958Application Date: 2012-03-06
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Publication No.: US08953336B2Publication Date: 2015-02-10
- Inventor: Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
- Applicant: Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H05K7/10
- IPC: H05K7/10

Abstract:
A surface metal wiring structure for a substrate includes one or more functional μbumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps. The surface metal wiring structure also includes a plurality of sacrificial μbumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps.
Public/Granted literature
- US20130233601A1 SURFACE METAL WIRING STRUCTURE FOR AN IC SUBSTRATE Public/Granted day:2013-09-12
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