发明授权
- 专利标题： Surface metal wiring structure for an IC substrate
- 专利标题（中）： 用于IC基片的表面金属布线结构
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申请号： US13412958申请日： 2012-03-06
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公开(公告)号： US08953336B2公开(公告)日： 2015-02-10
- 发明人: Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
- 申请人： Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H05K7/10
- IPC分类号： H05K7/10
摘要：
A surface metal wiring structure for a substrate includes one or more functional μbumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps. The surface metal wiring structure also includes a plurality of sacrificial μbumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps.
公开/授权文献
- US20130233601A1 SURFACE METAL WIRING STRUCTURE FOR AN IC SUBSTRATE 公开/授权日：2013-09-12
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