Invention Grant
US08956500B2 Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
有权
消除电感耦合等离子体反应器中的“M形”蚀刻速率曲线的方法
- Patent Title: Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
- Patent Title (中): 消除电感耦合等离子体反应器中的“M形”蚀刻速率曲线的方法
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Application No.: US11739428Application Date: 2007-04-24
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Publication No.: US08956500B2Publication Date: 2015-02-17
- Inventor: Stephen Yuen , Kyeong-Tae Lee , Valentin Todorow , Tae Won Kim , Anisul Khan , Shashank Deshmukh
- Applicant: Stephen Yuen , Kyeong-Tae Lee , Valentin Todorow , Tae Won Kim , Anisul Khan , Shashank Deshmukh
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306 ; H01J37/32
Abstract:
An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.
Public/Granted literature
- US20080264904A1 METHODS TO ELIMINATE "M-SHAPE" ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR Public/Granted day:2008-10-30
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