Invention Grant
- Patent Title: Method for manufacturing compound semiconductor device
- Patent Title (中): 化合物半导体器件的制造方法
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Application No.: US14224524Application Date: 2014-03-25
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Publication No.: US08956935B2Publication Date: 2015-02-17
- Inventor: Naoko Kurahashi
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-027670 20110210
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/335 ; H01L29/66 ; H01L29/423 ; H01L29/778 ; H03F1/32 ; H01L29/20 ; H01L29/40
Abstract:
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein the gate electrode includes a gate base portion on the gate insulating film and a gate umbrella portion, and a surface of the gate umbrella portion includes a Schottky contact with the compound semiconductor multilayer structure.
Public/Granted literature
- US20140206159A1 METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE Public/Granted day:2014-07-24
Information query
IPC分类:
