Invention Grant
- Patent Title: Selective formation of metallic films on metallic surfaces
- Patent Title (中): 在金属表面上选择性地形成金属膜
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Application No.: US13702992Application Date: 2011-06-10
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Publication No.: US08956971B2Publication Date: 2015-02-17
- Inventor: Suvi P. Haukka , Antti Niskanen , Marko Tuominen
- Applicant: Suvi P. Haukka , Antti Niskanen , Marko Tuominen
- Applicant Address: NL
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL
- Agency: Knobbe, Martens, Olson & Bear, LLP
- International Application: PCT/US2011/039970 WO 20110610
- International Announcement: WO2011/156705 WO 20111215
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/02 ; C23C16/02 ; C23C16/14 ; C23C16/455 ; H01L21/285 ; H01L21/768

Abstract:
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
Public/Granted literature
- US20130189837A1 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES Public/Granted day:2013-07-25
Information query
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