Invention Grant
- Patent Title: Methods of eliminating pattern collapse on photoresist patterns
- Patent Title (中): 消除光刻胶图案上的图案崩溃的方法
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Application No.: US14044304Application Date: 2013-10-02
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Publication No.: US08956981B2Publication Date: 2015-02-17
- Inventor: Jon Daley , Yoshiki Hishiro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/033 ; G03F7/40
Abstract:
A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
Public/Granted literature
- US20140038425A1 METHODS OF ELIMINATING PATTERN COLLAPSE ON PHOTORESIST PATTERNS Public/Granted day:2014-02-06
Information query
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