Invention Grant
US08957403B2 Select devices including an open volume, and related methods, memory devices, and electronic systems
有权
选择包括开放卷的设备，相关方法，存储设备和电子系统
- Patent Title: Select devices including an open volume, and related methods, memory devices, and electronic systems
- Patent Title (中): 选择包括开放卷的设备，相关方法，存储设备和电子系统
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Application No.: US13929348Application Date: 2013-06-27
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Publication No.: US08957403B2Publication Date: 2015-02-17
- Inventor: Bhaskar Srinivasan , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L21/02 ; H01L29/88 ; H01L27/102 ; H01L21/3205
Abstract:
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Public/Granted literature
- US20130285110A1 SELECT DEVICES INCLUDING AN OPEN VOLUME, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS Public/Granted day:2013-10-31
Information query
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