Invention Grant
US08957474B2 MOS transistors including U shaped channels regions with separated protruding portions
有权
MOS晶体管包括具有分离的突出部分的U形沟道区域
- Patent Title: MOS transistors including U shaped channels regions with separated protruding portions
- Patent Title (中): MOS晶体管包括具有分离的突出部分的U形沟道区域
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Application No.: US13894575Application Date: 2013-05-15
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Publication No.: US08957474B2Publication Date: 2015-02-17
- Inventor: Dae-Ik Kim , Ji-Young Kim , Hyeong-Sun Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0052068 20120516
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L27/02 ; H01L27/108 ; H01L29/423
Abstract:
A MOS transistor, can include a u-shaped cross-sectional channel region including spaced apart protruding portions separated by a trench and connected to one another by a connecting portion of the channel region at lower ends of the spaced apart protruding portions of the channel region. First and second impurity regions can be located at opposite ends of the -shaped cross-sectional channel region and separated from one another by the trench. A gate electrode can cover at least a planar face of the u-shaped cross-sectional channel region including the spaced apart protruding portions and the connecting portion and exposing the first and second impurity regions.
Public/Granted literature
- US20130307068A1 MOS TRANSISTORS INCLUDING U SHAPED CHANNELS REGIONS WITH SEPARATED PROTRUDING PORTIONS Public/Granted day:2013-11-21
Information query
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