Invention Grant
- Patent Title: Silicon light trap devices
- Patent Title (中): 硅光阱装置
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Application No.: US13930167Application Date: 2013-06-28
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Publication No.: US08957490B2Publication Date: 2015-02-17
- Inventor: Thoralf Kautzsch
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Patterson Thuente Pedersen, P.A.
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/0352

Abstract:
Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
Public/Granted literature
- US20150001665A1 SILICON LIGHT TRAP DEVICES Public/Granted day:2015-01-01
Information query
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