发明授权
- 专利标题： Self light-emitting device
- 专利标题（中）： 自发光装置
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申请号： US13366838申请日： 2012-02-06
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公开(公告)号： US08957584B2公开(公告)日： 2015-02-17
- 发明人: Tetsuo Tsutsui , Toshimitsu Konuma , Mayumi Mizukami
- 申请人： Tetsuo Tsutsui , Toshimitsu Konuma , Mayumi Mizukami
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP11-307903 19991029
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L51/52 ; G02F1/1335
摘要：
To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).
公开/授权文献
- US20120161160A1 Self Light-Emitting Device 公开/授权日：2012-06-28
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