Invention Grant
- Patent Title: Sensor
- Patent Title (中): 传感器
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Application No.: US13457072Application Date: 2012-04-26
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Publication No.: US08957687B2Publication Date: 2015-02-17
- Inventor: Axel Nackaerts , Matthias Merz , Youri Victorovitch Ponomarev
- Applicant: Axel Nackaerts , Matthias Merz , Youri Victorovitch Ponomarev
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP11165350 20110509
- Main IPC: G01R27/28
- IPC: G01R27/28 ; G01N27/414

Abstract:
The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor including: a field effect transistor integrated on the substrate and having a source, gate and drain connections, said gate of the field effect transistor including: a sensing gate conductively coupled to a sensing electrode; and a bias gate, wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.
Public/Granted literature
- US20120286803A1 Sensor Public/Granted day:2012-11-15
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