Invention Grant
- Patent Title: Methods of forming memory cells
- Patent Title (中): 形成记忆细胞的方法
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Application No.: US14053847Application Date: 2013-10-15
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Publication No.: US08962387B2Publication Date: 2015-02-24
- Inventor: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00
Abstract:
Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the metal oxide material, and a second electrode material is formed over the oxygen-sink material. The second electrode material is of a different composition than the oxygen-sink material. The metal oxide material is treated to transfer oxygen from a region of the metal oxide material to the oxygen-sink material and thereby subdivide the metal oxide material into at least two regions, with one of the regions nearest the oxygen-sink material being relatively oxygen depleted relative to another of the regions.
Public/Granted literature
- US20140051208A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2014-02-20
Information query
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