Invention Grant
US08962431B2 Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts
有权
形成含金属硅化物的材料的方法和形成含金属硅化物的触点的方法
- Patent Title: Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts
- Patent Title (中): 形成含金属硅化物的材料的方法和形成含金属硅化物的触点的方法
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Application No.: US14157192Application Date: 2014-01-16
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Publication No.: US08962431B2Publication Date: 2015-02-24
- Inventor: David H. Wells , John Mark Meldrim , Rita J. Klein
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L21/285 ; H01L21/3213 ; H01L21/283
Abstract:
A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.
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