Invention Grant
- Patent Title: Wrap around phase change memory
- Patent Title (中): 包围相变记忆
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Application No.: US13664412Application Date: 2012-10-30
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Publication No.: US08963116B2Publication Date: 2015-02-24
- Inventor: Khee Yong Lim , Zufa Zhang
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/20 ; G11C11/00

Abstract:
A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.
Public/Granted literature
- US20140117301A1 WRAP AROUND PHASE CHANGE MEMORY Public/Granted day:2014-05-01
Information query
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