发明授权
US08963178B2 Light emitting diode chip having distributed bragg reflector and method of fabricating the same
有权
具有分布式布拉格反射体的发光二极管芯片及其制造方法
- 专利标题: Light emitting diode chip having distributed bragg reflector and method of fabricating the same
- 专利标题(中): 具有分布式布拉格反射体的发光二极管芯片及其制造方法
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申请号: US13023876申请日: 2011-02-09
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公开(公告)号: US08963178B2公开(公告)日: 2015-02-24
- 发明人: Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
- 申请人: Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
- 申请人地址: KR Ansan-si
- 专利权人: Seoul Viosys Co., Ltd.
- 当前专利权人: Seoul Viosys Co., Ltd.
- 当前专利权人地址: KR Ansan-si
- 代理机构: H.C. Park & Associates, PLC
- 优先权: KR10-2009-0109870 20091113; KR10-2010-0013166 20100212; KR10-2010-0115347 20101119
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/46 ; H01L27/15
摘要:
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
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