Invention Grant
- Patent Title: Capacitive transducer and methods of manufacturing and operating the same
- Patent Title (中): 电容传感器及其制造和操作方法
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Application No.: US13591845Application Date: 2012-08-22
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Publication No.: US08963261B2Publication Date: 2015-02-24
- Inventor: Che-heung Kim
- Applicant: Che-heung Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0083582 20110822
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B81B3/00

Abstract:
Provided are a capacitive transducer, and methods of manufacturing and operating the same. The capacitive transducer includes: a monolithic substrate comprising a first doping region, a second doping region that is opposite in conductivity to the first doping region, and a vibrating portion; and an empty space that is disposed between the first doping region and the vibrating portion. The vibrating portion includes a plurality of through-holes, and a material film for sealing the plurality of through-holes is disposed on the vibrating portion.
Public/Granted literature
- US20130049528A1 CAPACITIVE TRANSDUCER AND METHODS OF MANUFACTURING AND OPERATING THE SAME Public/Granted day:2013-02-28
Information query
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