Invention Grant
- Patent Title: Crack stop structure and method for forming the same
- Patent Title (中): 断裂结构及其形成方法
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Application No.: US13231961Application Date: 2011-09-14
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Publication No.: US08963282B2Publication Date: 2015-02-24
- Inventor: Tse-Yao Huang , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Tse-Yao Huang , Yi-Nan Chen , Hsien-Wen Liu
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L23/31 ; H01L23/00 ; H01L21/78 ; H01L21/56
Abstract:
A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.
Public/Granted literature
- US20130062727A1 CRACK STOP STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2013-03-14
Information query
IPC分类:
