发明授权
- 专利标题： Semiconductor structure with beryllium oxide
- 专利标题（中）： 半导体结构与氧化铍
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申请号： US13816164申请日： 2012-12-18
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公开(公告)号： US08963295B2公开(公告)日： 2015-02-24
- 发明人: Jing Wang , Renrong Liang , Lei Guo , Jun Xu
- 申请人： Tsinghua University
- 申请人地址： CN Beijing
- 专利权人： Tsinghua University
- 当前专利权人： Tsinghua University
- 当前专利权人地址： CN Beijing
- 代理机构： Houtteman Law LLC
- 优先权： CN201210401590 20121019
- 国际申请： PCT/CN2012/086875 WO 20121218
- 国际公布： WO2014/059733 WO 20140424
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/00 ; H01L29/10 ; H01L29/04 ; H01L21/02 ; H01L29/06 ; H01L29/24 ; H01L21/8238 ; H01L21/027
摘要：
A semiconductor structure with beryllium oxide is provided. The semiconductor structure comprises: a semiconductor substrate (100); and a plurality of insulation oxide layers (201, 202 . . . 20x) and a plurality of single crystal semiconductor layers (301, 302 . . . 30x) alternately stacked on the semiconductor substrate (100). A material of the insulation oxide layer (201) contacted with the semiconductor substrate (100) is any one of beryllium oxide, SiO2, SiOxNy and a combination thereof, a material of other insulation oxide layers (202 . . . 20x) is single crystal beryllium oxide.
公开/授权文献
- US20140145314A1 SEMICONDUCTOR STRUCTURE WITH BERYLLIUM OXIDE 公开/授权日：2014-05-29
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