Invention Grant
- Patent Title: Die-to-die gap control for semiconductor structure and method
- Patent Title (中): 用于半导体结构和方法的芯片到芯片间隙控制
-
Application No.: US13221447Application Date: 2011-08-30
-
Publication No.: US08963334B2Publication Date: 2015-02-24
- Inventor: Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
- Applicant: Jing-Cheng Lin , Szu Wei Lu , Ying-Ching Shih , Ying-Da Wang , Li-Chung Kuo , Long Hua Lee , Shin-Puu Jeng , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/065 ; H01L21/683 ; H01L23/00 ; H01L25/00 ; H01L21/768 ; H01L21/56 ; H01L23/58

Abstract:
An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached to the substrate, and the first die is coupled to the first surface of the substrate. The second die is attached to the substrate, and the second die is coupled to the first surface of the substrate. A first distance is between a first edge of the first die and a first edge of the second die, and the first distance is in a direction parallel to the first surface of the substrate. The first distance is equal to or less than 200 micrometers.
Public/Granted literature
- US20130049216A1 Die-to-Die Gap Control for Semiconductor Structure and Method Public/Granted day:2013-02-28
Information query
IPC分类: