发明授权
- 专利标题： On-chip slow-wave through-silicon via coplanar waveguide structures, method of manufacture and design structure
- 专利标题（中）： 通过共面波导结构的片上慢波通硅，制造方法和设计结构
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申请号： US13156935申请日： 2011-06-09
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公开(公告)号： US08963657B2公开(公告)日： 2015-02-24
- 发明人: Essam Mina , Guoan Wang , Wayne H. Woods, Jr.
- 申请人： Essam Mina , Guoan Wang , Wayne H. Woods, Jr.
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01P3/08
- IPC分类号： H01P3/08 ; G06F17/50 ; H01L21/768 ; H01L23/48 ; H01P3/00
摘要：
On-chip, high performance, slow-wave coplanar waveguide with through-silicon via structures, method of manufacture and design structures for integrated circuits are provided herein. The method includes forming at least one ground plane layer in a substrate and forming a signal layer in the substrate, in a same plane layer as the at least one ground. The method further includes forming at least one metal filled through-silicon via between the at least one ground plane layer and the signal layer.