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US08968469B2 Semiconductor device and method of manufacture thereof 有权
半导体装置及其制造方法

Semiconductor device and method of manufacture thereof
Abstract:
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
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