Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12901780Application Date: 2010-10-11
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Publication No.: US08968469B2Publication Date: 2015-03-03
- Inventor: Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
- Applicant: Arnab Basu , Max Robinson , Ben Cantwell , Andy Brinkman
- Applicant Address: GB Sedgefield
- Assignee: Kromek Limited
- Current Assignee: Kromek Limited
- Current Assignee Address: GB Sedgefield
- Agency: Popovich, Wiles & O'Connell, P.A.
- Priority: GB0526070.8 20051221; GB0526073.2 20051221
- Main IPC: C30B21/02
- IPC: C30B21/02 ; H01L21/02 ; C30B11/00 ; C30B29/48

Abstract:
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.
Public/Granted literature
- US20110024877A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2011-02-03
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