Invention Grant
- Patent Title: PVD sputtering target with a protected backing plate
- Patent Title (中): PVD溅射靶与受保护的背板
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Application No.: US13024198Application Date: 2011-02-09
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Publication No.: US08968537B2Publication Date: 2015-03-03
- Inventor: Muhammad M. Rasheed , Rongjun Wang
- Applicant: Muhammad M. Rasheed , Rongjun Wang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C22C19/03 ; C22C9/00 ; C22C9/04

Abstract:
Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
Public/Granted literature
- US20120199469A1 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE Public/Granted day:2012-08-09
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