发明授权
- 专利标题： Non-lithographic line pattern formation
- 专利标题（中）： 非平版印刷线图案形成
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申请号： US13561122申请日： 2012-07-30
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公开(公告)号： US08969213B2公开(公告)日： 2015-03-03
- 发明人: Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
- 申请人： Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Yuanmin Cai
- 主分类号： H01L21/308
- IPC分类号： H01L21/308
摘要：
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.
公开/授权文献
- US20140027917A1 NON-LITHOGRAPHIC LINE PATTERN FORMATION 公开/授权日：2014-01-30
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