公开(公告)号：US08969213B2

公开(公告)日：2015-03-03

申请号：US13561122

申请日：2012-07-30

申请人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

发明人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/67063 ,  Y10T428/24802

摘要： A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.

摘要翻译： 金属层沉积在下层材料层上。 金属层包括可通过等离子体氧化和/或氮化转化为含介电金属的化合物的元素金属。 在金属层上形成硬掩模部分。 进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。 重复将硬掩模部分的表面拉回序列，沟槽蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的线图案 尺寸。

公开(公告)号：US09054156B2

公开(公告)日：2015-06-09

申请号：US13561133

申请日：2012-07-30

申请人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

发明人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L21/768 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/498 ,  H01L29/0692 ,  H01L45/1691 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal layer is deposited over a material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation or nitridation. A hard mask portion is formed over the metal layer. A plasma impermeable spacer is formed on at least one first sidewall of the hard mask portion, while at least one second sidewall of the hard mask portion is physically exposed. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. A sequence of a surface pull back of the hard mask portion, cavity etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a hole pattern having a spacing that is not limited by lithographic minimum dimensions.

摘要翻译： 金属层沉积在材料层上。 金属层包括可通过等离子体氧化或氮化转化为含介电金属的化合物的元素金属。 在金属层上形成硬掩模部分。 在硬掩模部分的至少一个第一侧壁上形成等离子体不可渗透的间隔物，同时硬掩模部分的至少一个第二侧壁物理暴露。 进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。 重复将硬掩模部分的表面拉回序列，腔蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的孔图案 尺寸。

公开(公告)号：US20140027923A1

公开(公告)日：2014-01-30

申请号：US13561133

申请日：2012-07-30

申请人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

发明人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L21/768 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/498 ,  H01L29/0692 ,  H01L45/1691 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal layer is deposited over a material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation or nitridation. A hard mask portion is formed over the metal layer. A plasma impermeable spacer is formed on at least one first sidewall of the hard mask portion, while at least one second sidewall of the hard mask portion is physically exposed. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. A sequence of a surface pull back of the hard mask portion, cavity etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a hole pattern having a spacing that is not limited by lithographic minimum dimensions.

摘要翻译： 金属层沉积在材料层上。 金属层包括可通过等离子体氧化或氮化转化为含介电金属的化合物的元素金属。 在金属层上形成硬掩模部分。 在硬掩模部分的至少一个第一侧壁上形成等离子体不可渗透的间隔物，同时硬掩模部分的至少一个第二侧壁物理暴露。 进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。 重复将硬掩模部分的表面拉回序列，腔蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的孔图案 尺寸。

公开(公告)号：US20140027917A1

公开(公告)日：2014-01-30

申请号：US13561122

申请日：2012-07-30

申请人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

发明人： Chiahsun Tseng ,  David V. Horak ,  Chun-chen Yeh ,  Yunpeng Yin

IPC分类号： H01L21/308 ,  H01L23/48

CPC分类号： H01L21/3081 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/67063 ,  Y10T428/24802

摘要： A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.

摘要翻译： 金属层沉积在下层材料层上。 金属层包括可通过等离子体氧化和/或氮化转化为含介电金属的化合物的元素金属。 在金属层上形成硬掩模部分。 进行等离子体氧化或氮化以将金属层的物理暴露表面转化为含介电金属的化合物。 重复将硬掩模部分的表面拉回序列，沟槽蚀刻，另一表面拉回和将顶表面转化为含介电金属的化合物，以形成具有不受光刻最小值限制的间隔的线图案 尺寸。

公开(公告)号：US20120282779A1

公开(公告)日：2012-11-08

申请号：US13102224

申请日：2011-05-06

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

公开(公告)号：US08916337B2

公开(公告)日：2014-12-23

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： G03F7/26

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US20140035142A1

公开(公告)日：2014-02-06

申请号：US13562953

申请日：2012-07-31

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76844 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.

摘要翻译： 可以通过在形成介电材料之前形成电介质材料的每个通孔开口内形成轮廓控制衬垫来控制通孔的轮廓，然后在电介质材料内形成线路开口。 在形成线路开口期间在每个通孔开口内存在轮廓控制衬垫防止存在于线路开口下方并且邻近通孔开口的电介质材料部分的拐角的四舍五入。

公开(公告)号：US08835305B2

公开(公告)日：2014-09-16

申请号：US13562953

申请日：2012-07-31

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

IPC分类号： H01L21/4763 ,  H01L23/12 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76844 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.

摘要翻译： 可以通过在形成介电材料之前形成电介质材料的每个通孔开口内形成轮廓控制衬垫来控制通孔的轮廓，然后在电介质材料内形成线路开口。 在形成线路开口期间在每个通孔开口内存在轮廓控制衬垫防止存在于线路开口下方并且邻近通孔开口的电介质材料部分的拐角的四舍五入。

公开(公告)号：US20130216776A1

公开(公告)日：2013-08-22

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： B32B3/00 ,  G03F7/20

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US08298954B1

公开(公告)日：2012-10-30

申请号：US13102224

申请日：2011-05-06

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。