Invention Grant
- Patent Title: Semiconductor light emitting device and manufacturing method thereof
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US13225979Application Date: 2011-09-06
-
Publication No.: US08969895B2Publication Date: 2015-03-03
- Inventor: Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
- Applicant: Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0104215 20101025
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/38 ; H01L33/42 ; H01L33/32

Abstract:
A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
Public/Granted literature
- US20120098009A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-04-26
Information query
IPC分类: