发明授权
- 专利标题: Vertical memory devices with quantum-dot charge storage cells
- 专利标题(中): 具有量子点电荷存储单元的垂直存储器件
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申请号: US13042051申请日: 2011-03-07
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公开(公告)号: US08969947B2公开(公告)日: 2015-03-03
- 发明人: Jae-goo Lee , Jung-dal Choi , Young-woo Park
- 申请人: Jae-goo Lee , Jung-dal Choi , Young-woo Park
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2010-0039167 20100427
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/28 ; H01L29/66 ; H01L29/423 ; H01L29/792 ; H01L27/115 ; B82Y10/00
摘要:
A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the semiconductor column. Each of the storage cells includes a tunneling insulating layer disposed on the sidewall of the semiconductor column, a polymer layer disposed on the tunneling insulating layer, a plurality of quantum dots disposed on or in the polymer layer and a blocking insulating layer disposed on the polymer layer.